Vishay Semiconductor Diodes Division - BAS34-TR

KEY Part #: K6439522

BAS34-TR Pricing (USD) [2397985pcs Stock]

  • 1 pcs$0.01628
  • 50,000 pcs$0.01620

Part Number:
BAS34-TR
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 60V 200MA DO35. Diodes - General Purpose, Power, Switching 70 Volt 200mA 2.0 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Special Purpose, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division BAS34-TR electronic components. BAS34-TR can be shipped within 24 hours after order. If you have any demands for BAS34-TR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS34-TR Product Attributes

Part Number : BAS34-TR
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 60V 200MA DO35
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 60V
Current - Average Rectified (Io) : 200mA
Voltage - Forward (Vf) (Max) @ If : 1V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 1nA @ 30V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : 175°C (Max)

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