Vishay Semiconductor Diodes Division - S1FLJ-GS18

KEY Part #: K6439430

S1FLJ-GS18 Pricing (USD) [2154871pcs Stock]

  • 1 pcs$0.01725
  • 50,000 pcs$0.01716

Part Number:
S1FLJ-GS18
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 1A DO219AB. Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Diodes - Bridge Rectifiers and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division S1FLJ-GS18 electronic components. S1FLJ-GS18 can be shipped within 24 hours after order. If you have any demands for S1FLJ-GS18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1FLJ-GS18 Product Attributes

Part Number : S1FLJ-GS18
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 1A DO219AB
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 700mA
Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.8µs
Current - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 4pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-219AB
Supplier Device Package : DO-219AB (SMF)
Operating Temperature - Junction : -55°C ~ 150°C

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