IXFQ30N60X Pricing (USD) [15904pcs Stock]
- 1 pcs$2.85133
- 10 pcs$2.54504
- 100 pcs$2.08693
- 500 pcs$1.68991
- 1,000 pcs$1.42522
- Part Number:
- IXFQ30N60X
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 30A TO3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Modules, Thyristors - TRIACs, Power Driver Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFQ30N60X electronic components. IXFQ30N60X can be shipped within 24 hours after order. If you have any demands for IXFQ30N60X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ30N60X Product Attributes
Part Number :
IXFQ30N60X
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 30A TO3P
Series :
HiPerFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
155 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2270pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
500W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
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