[998pcs Stock]
- Part Number:
- 2SK2845(TE16L1,Q)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 900V 1A DP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage 2SK2845(TE16L1,Q) electronic components. 2SK2845(TE16L1,Q) can be shipped within 24 hours after order. If you have any demands for 2SK2845(TE16L1,Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SK2845(TE16L1,Q) Product Attributes
Part Number :
2SK2845(TE16L1,Q)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 900V 1A DP
Series :
-
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
40W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DP
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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