Toshiba Semiconductor and Storage - TK12A50E,S5X

KEY Part #: K6398102

TK12A50E,S5X Pricing (USD) [47472pcs Stock]

  • 1 pcs$0.82366

Part Number:
TK12A50E,S5X
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 500V TO220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK12A50E,S5X electronic components. TK12A50E,S5X can be shipped within 24 hours after order. If you have any demands for TK12A50E,S5X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK12A50E,S5X Product Attributes

Part Number : TK12A50E,S5X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 500V TO220SIS
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 520 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id : 4V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

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