FDMS86163P Pricing (USD) [83412pcs Stock]
- 1 pcs$0.46877
- 3,000 pcs$0.40357
- Part Number:
- FDMS86163P
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 100V 7.9A POWER56.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMS86163P electronic components. FDMS86163P can be shipped within 24 hours after order. If you have any demands for FDMS86163P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS86163P Product Attributes
Part Number :
FDMS86163P
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 100V 7.9A POWER56
Series :
PowerTrench®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
7.9A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
22 mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
4085pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 104W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerTDFN
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