IXFL210N30P3 Pricing (USD) [3870pcs Stock]
- 1 pcs$12.31451
- 10 pcs$11.38930
- 100 pcs$9.72698
- Part Number:
- IXFL210N30P3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 300V 108A TO-264.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in IXYS IXFL210N30P3 electronic components. IXFL210N30P3 can be shipped within 24 hours after order. If you have any demands for IXFL210N30P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFL210N30P3 Product Attributes
Part Number :
IXFL210N30P3
Manufacturer :
IXYS
Description :
MOSFET N-CH 300V 108A TO-264
Series :
HiPerFET™, Polar3™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 105A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
268nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
16200pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
520W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
ISOPLUS264™
Package / Case :
ISOPLUS264™
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