TK10A80E,S4X Pricing (USD) [38643pcs Stock]
- 1 pcs$1.17226
- 50 pcs$0.89682
- 100 pcs$0.80714
- 500 pcs$0.62778
- 1,000 pcs$0.52016
- Part Number:
- TK10A80E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 800V TO220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Modules and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK10A80E,S4X electronic components. TK10A80E,S4X can be shipped within 24 hours after order. If you have any demands for TK10A80E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10A80E,S4X Product Attributes
Part Number :
TK10A80E,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 800V TO220SIS
Series :
π-MOSVIII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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