IPAW60R600P7SXKSA1 Pricing (USD) [85018pcs Stock]
- 1 pcs$0.44737
- 10 pcs$0.39594
- 100 pcs$0.29611
- 500 pcs$0.22963
- 1,000 pcs$0.18129
- Part Number:
- IPAW60R600P7SXKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CHANNEL 600V 6A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Power Driver Modules, Transistors - Programmable Unijunction, Transistors - JFETs, Transistors - Special Purpose, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPAW60R600P7SXKSA1 electronic components. IPAW60R600P7SXKSA1 can be shipped within 24 hours after order. If you have any demands for IPAW60R600P7SXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPAW60R600P7SXKSA1 Product Attributes
Part Number :
IPAW60R600P7SXKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CHANNEL 600V 6A TO220
Series :
CoolMOS™ P7
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id :
4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
363pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
21W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220 Full Pack
Package / Case :
TO-220-3 Full Pack
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