CSD19537Q3T Pricing (USD) [111531pcs Stock]
- 1 pcs$0.33163
- 250 pcs$0.31640
- 1,250 pcs$0.21594
- Part Number:
- CSD19537Q3T
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 100V 50A 8VSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Thyristors - SCRs, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD19537Q3T electronic components. CSD19537Q3T can be shipped within 24 hours after order. If you have any demands for CSD19537Q3T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19537Q3T Product Attributes
Part Number :
CSD19537Q3T
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 100V 50A 8VSON
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
14.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 83W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-VSON (3.3x3.3)
Package / Case :
8-PowerVDFN
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