FDB33N25TM Pricing (USD) [75712pcs Stock]
- 1 pcs$0.51644
- 800 pcs$0.50140
- Part Number:
- FDB33N25TM
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 250V 33A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDB33N25TM electronic components. FDB33N25TM can be shipped within 24 hours after order. If you have any demands for FDB33N25TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDB33N25TM Product Attributes
Part Number :
FDB33N25TM
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 250V 33A D2PAK
Series :
UniFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
94 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2135pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
235W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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