SCTWA50N120 Pricing (USD) [3254pcs Stock]
- 1 pcs$13.31107
- 600 pcs$11.70018
- Part Number:
- SCTWA50N120
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 1200V 65A HIP247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - Programmable Unijunction, Diodes - Zener - Single, Thyristors - SCRs and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics SCTWA50N120 electronic components. SCTWA50N120 can be shipped within 24 hours after order. If you have any demands for SCTWA50N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTWA50N120 Product Attributes
Part Number :
SCTWA50N120
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 1200V 65A HIP247
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1200V
Current - Continuous Drain (Id) @ 25°C :
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
20V
Rds On (Max) @ Id, Vgs :
69 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
122nC @ 20V
Vgs (Max) :
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 400V
FET Feature :
-
Power Dissipation (Max) :
318W (Tc)
Operating Temperature :
-55°C ~ 200°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
HiP247™
Package / Case :
TO-247-3
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