IRF6218PBF Pricing (USD) [34256pcs Stock]
- 1 pcs$1.27803
- 10 pcs$1.09417
- 100 pcs$0.87918
- 500 pcs$0.68379
- 1,000 pcs$0.56657
- Part Number:
- IRF6218PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 150V 27A TO-220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF6218PBF electronic components. IRF6218PBF can be shipped within 24 hours after order. If you have any demands for IRF6218PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6218PBF Product Attributes
Part Number :
IRF6218PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 150V 27A TO-220AB
Series :
HEXFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
150V
Current - Continuous Drain (Id) @ 25°C :
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2210pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
250W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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