Part Number :
IPB180P04P4L02ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 40V 180A TO263-7
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
2.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs :
286nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
18700pF @ 25V
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-7-3
Package / Case :
TO-263-7, D²Pak (6 Leads + Tab)