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  5. FDI038AN06A0

ON Semiconductor - FDI038AN06A0

KEY Part #: K6417662

FDI038AN06A0 Pricing (USD) [38029pcs Stock]

  • 1 pcs$1.03332
  • 800 pcs$1.02817
Part Number:
FDI038AN06A0
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 60V 80A TO-262AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Bridge Rectifiers and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in ON Semiconductor FDI038AN06A0 electronic components. FDI038AN06A0 can be shipped within 24 hours after order. If you have any demands for FDI038AN06A0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDI038AN06A0 Product Attributes

Part Number : FDI038AN06A0
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 60V 80A TO-262AB
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 17A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 124nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 310W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : I2PAK (TO-262)
Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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