Nexperia USA Inc. - PHD101NQ03LT,118

KEY Part #: K6420798

PHD101NQ03LT,118 Pricing (USD) [257847pcs Stock]

  • 1 pcs$0.14417
  • 10,000 pcs$0.14345

Part Number:
PHD101NQ03LT,118
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 30V 75A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Diodes - Bridge Rectifiers, Transistors - Special Purpose, Thyristors - SCRs and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PHD101NQ03LT,118 electronic components. PHD101NQ03LT,118 can be shipped within 24 hours after order. If you have any demands for PHD101NQ03LT,118, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PHD101NQ03LT,118 Product Attributes

Part Number : PHD101NQ03LT,118
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 30V 75A DPAK
Series : TrenchMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2180pF @ 25V
FET Feature : -
Power Dissipation (Max) : 166W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

You May Also Be Interested In