Rohm Semiconductor - RAQ045P01TCR

KEY Part #: K6402716

[2608pcs Stock]


    Part Number:
    RAQ045P01TCR
    Manufacturer:
    Rohm Semiconductor
    Detailed description:
    MOSFET P-CH 12V 4.5A TUMT6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Transistors - FETs, MOSFETs - Single ...
    Competitive Advantage:
    We specialize in Rohm Semiconductor RAQ045P01TCR electronic components. RAQ045P01TCR can be shipped within 24 hours after order. If you have any demands for RAQ045P01TCR, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RAQ045P01TCR Product Attributes

    Part Number : RAQ045P01TCR
    Manufacturer : Rohm Semiconductor
    Description : MOSFET P-CH 12V 4.5A TUMT6
    Series : -
    Part Status : Active
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 12V
    Current - Continuous Drain (Id) @ 25°C : 4.5A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
    Rds On (Max) @ Id, Vgs : 30 mOhm @ 4.5A, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 40nC @ 4.5V
    Vgs (Max) : -8V
    Input Capacitance (Ciss) (Max) @ Vds : 4200pF @ 6V
    FET Feature : -
    Power Dissipation (Max) : 600mW (Ta)
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : TSMT6 (SC-95)
    Package / Case : SOT-23-6 Thin, TSOT-23-6

    You May Also Be Interested In
    • BS170PSTOB

      Diodes Incorporated

      MOSFET N-CH 60V 0.27A TO92-3.

    • DN2540N3-G

      Microchip Technology

      MOSFET N-CH 400V 0.12A TO92-3.

    • GP1M008A050CG

      Global Power Technologies Group

      MOSFET N-CH 500V 8A DPAK.

    • GP1M007A065CG

      Global Power Technologies Group

      MOSFET N-CH 650V 6.5A DPAK.

    • GP1M003A090C

      Global Power Technologies Group

      MOSFET N-CH 900V 2.5A DPAK.

    • GP1M003A080CH

      Global Power Technologies Group

      MOSFET N-CH 800V 3A DPAK.