PMZB370UNE,315 Pricing (USD) [708925pcs Stock]
- 1 pcs$0.05217
- 10,000 pcs$0.04510
- Part Number:
- PMZB370UNE,315
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 30V 0.9A DFN1006B-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Diodes - Rectifiers - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMZB370UNE,315 electronic components. PMZB370UNE,315 can be shipped within 24 hours after order. If you have any demands for PMZB370UNE,315, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMZB370UNE,315 Product Attributes
Part Number :
PMZB370UNE,315
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 30V 0.9A DFN1006B-3
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
490 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id :
1.05V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
1.16nC @ 15V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
78pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
360mW (Ta), 2.7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DFN1006B-3
Package / Case :
3-XFDFN
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