SPB80P06PGATMA1 Pricing (USD) [48585pcs Stock]
- 1 pcs$0.80478
- Part Number:
- SPB80P06PGATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 60V 80A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Transistors - JFETs and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies SPB80P06PGATMA1 electronic components. SPB80P06PGATMA1 can be shipped within 24 hours after order. If you have any demands for SPB80P06PGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB80P06PGATMA1 Product Attributes
Part Number :
SPB80P06PGATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 60V 80A TO-263
Series :
SIPMOS®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 64A, 10V
Vgs(th) (Max) @ Id :
4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs :
173nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5033pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
340W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-3-2
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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