SI8497DB-T2-E1 Pricing (USD) [404783pcs Stock]
- 1 pcs$0.09138
- 3,000 pcs$0.08631
- Part Number:
- SI8497DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET P-CH 30V 13A MICROFOOT.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Thyristors - SCRs - Modules, Power Driver Modules and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI8497DB-T2-E1 electronic components. SI8497DB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8497DB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8497DB-T2-E1 Product Attributes
Part Number :
SI8497DB-T2-E1
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 30V 13A MICROFOOT
Series :
TrenchFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2V, 4.5V
Rds On (Max) @ Id, Vgs :
53 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
49nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1320pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.77W (Ta), 13W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-microfoot
Package / Case :
6-UFBGA
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