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ON Semiconductor - FDMC8878

KEY Part #: K6420254

FDMC8878 Pricing (USD) [180737pcs Stock]

  • 1 pcs$0.20567
  • 3,000 pcs$0.20465
Part Number:
FDMC8878
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 9.6A POWER33.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor FDMC8878 electronic components. FDMC8878 can be shipped within 24 hours after order. If you have any demands for FDMC8878, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMC8878 Product Attributes

Part Number : FDMC8878
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 9.6A POWER33
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 9.6A (Ta), 16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1230pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.1W (Ta), 31W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-MLP (3.3x3.3), Power33
Package / Case : 8-PowerWDFN

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