TSM60NB190CZ C0G Pricing (USD) [33639pcs Stock]
- 1 pcs$1.22515
- Part Number:
- TSM60NB190CZ C0G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Detailed description:
- MOSFET N-CHANNEL 600V 18A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - RF, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Taiwan Semiconductor Corporation TSM60NB190CZ C0G electronic components. TSM60NB190CZ C0G can be shipped within 24 hours after order. If you have any demands for TSM60NB190CZ C0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB190CZ C0G Product Attributes
Part Number :
TSM60NB190CZ C0G
Manufacturer :
Taiwan Semiconductor Corporation
Description :
MOSFET N-CHANNEL 600V 18A TO220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1273pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
33.8W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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