STP10N62K3 Pricing (USD) [38327pcs Stock]
- 1 pcs$1.02016
- 10 pcs$0.92066
- 100 pcs$0.73987
- 500 pcs$0.57546
- Part Number:
- STP10N62K3
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 620V 8.4A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - Zener - Arrays, Thyristors - TRIACs, Power Driver Modules, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STP10N62K3 electronic components. STP10N62K3 can be shipped within 24 hours after order. If you have any demands for STP10N62K3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP10N62K3 Product Attributes
Part Number :
STP10N62K3
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 620V 8.4A TO220
Series :
SuperMESH3™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
620V
Current - Continuous Drain (Id) @ 25°C :
8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1250pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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