TK12A60D(STA4,Q,M) Pricing (USD) [68442pcs Stock]
- 1 pcs$0.60901
- 2,500 pcs$0.60598
- Part Number:
- TK12A60D(STA4,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 600V 12A TO-220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - JFETs, Thyristors - TRIACs, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK12A60D(STA4,Q,M) electronic components. TK12A60D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK12A60D(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12A60D(STA4,Q,M) Product Attributes
Part Number :
TK12A60D(STA4,Q,M)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 12A TO-220SIS
Series :
π-MOSVII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
550 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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