[8652pcs Stock]
- Part Number:
- SI1300BDL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 20V 400MA SC-70-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI1300BDL-T1-GE3 electronic components. SI1300BDL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1300BDL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1300BDL-T1-GE3 Product Attributes
Part Number :
SI1300BDL-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 20V 400MA SC-70-3
Series :
TrenchFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
850 mOhm @ 250mA, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.84nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
35pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
190mW (Ta), 200mW (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-70-3
Package / Case :
SC-70, SOT-323
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