Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 900V 10A TO-3PB
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.3 Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1500pF @ 30V
Power Dissipation (Max) :
2.5W (Ta), 190W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3PB
Package / Case :
TO-3P-3, SC-65-3