PSMN3R3-80BS,118 Pricing (USD) [73710pcs Stock]
- 1 pcs$0.53311
- 800 pcs$0.53046
- Part Number:
- PSMN3R3-80BS,118
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 80V 120A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Zener - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN3R3-80BS,118 electronic components. PSMN3R3-80BS,118 can be shipped within 24 hours after order. If you have any demands for PSMN3R3-80BS,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN3R3-80BS,118 Product Attributes
Part Number :
PSMN3R3-80BS,118
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 80V 120A D2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.5 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
111nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8161pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
306W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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