ON Semiconductor - FDP86363-F085

KEY Part #: K6402717

[2607pcs Stock]


    Part Number:
    FDP86363-F085
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 80V 110A TO-220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Programmable Unijunction and Diodes - RF ...
    Competitive Advantage:
    We specialize in ON Semiconductor FDP86363-F085 electronic components. FDP86363-F085 can be shipped within 24 hours after order. If you have any demands for FDP86363-F085, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDP86363-F085 Product Attributes

    Part Number : FDP86363-F085
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 80V 110A TO-220
    Series : Automotive, AEC-Q101, PowerTrench®
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 80V
    Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 2.8 mOhm @ 80A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 150nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 10000pF @ 40V
    FET Feature : -
    Power Dissipation (Max) : 300W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220-3
    Package / Case : TO-220-3

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