[13799pcs Stock]
- Part Number:
- PHB38N02LT,118
- Manufacturer:
- NXP USA Inc.
- Detailed description:
- MOSFET N-CH 20V 44.7A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in NXP USA Inc. PHB38N02LT,118 electronic components. PHB38N02LT,118 can be shipped within 24 hours after order. If you have any demands for PHB38N02LT,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB38N02LT,118 Product Attributes
Part Number :
PHB38N02LT,118
Manufacturer :
NXP USA Inc.
Description :
MOSFET N-CH 20V 44.7A D2PAK
Series :
TrenchMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
44.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 5V
Rds On (Max) @ Id, Vgs :
16 mOhm @ 25A, 5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15.1nC @ 5V
Vgs (Max) :
12V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
57.6W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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