ON Semiconductor - FDD107AN06LA0

KEY Part #: K6411327

[13829pcs Stock]


    Part Number:
    FDD107AN06LA0
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 60V 10.9A D-PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in ON Semiconductor FDD107AN06LA0 electronic components. FDD107AN06LA0 can be shipped within 24 hours after order. If you have any demands for FDD107AN06LA0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDD107AN06LA0 Product Attributes

    Part Number : FDD107AN06LA0
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 60V 10.9A D-PAK
    Series : PowerTrench®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 60V
    Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta), 10.9A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
    Rds On (Max) @ Id, Vgs : 91 mOhm @ 10.9A, 10V
    Vgs(th) (Max) @ Id : 3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 5.5nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 360pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 25W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : TO-252AA
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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