STB11NM60FDT4 Pricing (USD) [30284pcs Stock]
- 1 pcs$1.36090
- 1,000 pcs$1.21144
- Part Number:
- STB11NM60FDT4
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 11A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Diodes - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STB11NM60FDT4 electronic components. STB11NM60FDT4 can be shipped within 24 hours after order. If you have any demands for STB11NM60FDT4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB11NM60FDT4 Product Attributes
Part Number :
STB11NM60FDT4
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 11A D2PAK
Series :
FDmesh™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
900pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
160W (Tc)
Operating Temperature :
-
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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