[1353pcs Stock]
- Part Number:
- IRFHM831TR2PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 14A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFHM831TR2PBF electronic components. IRFHM831TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM831TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM831TR2PBF Product Attributes
Part Number :
IRFHM831TR2PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 14A PQFN
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
14A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.8 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1050pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 27W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PQFN (3x3)
Package / Case :
8-PowerTDFN
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