SUP60030E-GE3 Pricing (USD) [26720pcs Stock]
- 1 pcs$1.49397
- 10 pcs$1.33312
- 100 pcs$1.03710
- 500 pcs$0.83980
- 1,000 pcs$0.70826
- Part Number:
- SUP60030E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 80V 120A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction and Diodes - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SUP60030E-GE3 electronic components. SUP60030E-GE3 can be shipped within 24 hours after order. If you have any demands for SUP60030E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUP60030E-GE3 Product Attributes
Part Number :
SUP60030E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 80V 120A TO220AB
Series :
TrenchFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
3.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
141nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7910pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
375W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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