TPN11006NL,LQ Pricing (USD) [298599pcs Stock]
- 1 pcs$0.13631
- 3,000 pcs$0.13563
- Part Number:
- TPN11006NL,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 60V 17A 8TSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TPN11006NL,LQ electronic components. TPN11006NL,LQ can be shipped within 24 hours after order. If you have any demands for TPN11006NL,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN11006NL,LQ Product Attributes
Part Number :
TPN11006NL,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 60V 17A 8TSON
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11.4 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2000pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
700mW (Ta), 30W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Package / Case :
8-PowerVDFN
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