Toshiba Semiconductor and Storage - TK2Q60D(Q)

KEY Part #: K6419929

TK2Q60D(Q) Pricing (USD) [144926pcs Stock]

  • 1 pcs$0.28215
  • 200 pcs$0.28075

Part Number:
TK2Q60D(Q)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 600V 2A PW-MOLD.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK2Q60D(Q) electronic components. TK2Q60D(Q) can be shipped within 24 hours after order. If you have any demands for TK2Q60D(Q), Please submit a Request for Quotation here or send us an email:
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TK2Q60D(Q) Product Attributes

Part Number : TK2Q60D(Q)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 2A PW-MOLD
Series : π-MOSVII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.3 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 25V
FET Feature : -
Power Dissipation (Max) : 60W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PW-MOLD2
Package / Case : TO-251-3 Stub Leads, IPak