TK31V60X,LQ Pricing (USD) [38347pcs Stock]
- 1 pcs$1.07088
- 2,500 pcs$1.06555
- Part Number:
- TK31V60X,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 600V 30.8A 5DFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Diodes - RF and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK31V60X,LQ electronic components. TK31V60X,LQ can be shipped within 24 hours after order. If you have any demands for TK31V60X,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31V60X,LQ Product Attributes
Part Number :
TK31V60X,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 30.8A 5DFN
Series :
DTMOSIV-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
98 mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
FET Feature :
Super Junction
Power Dissipation (Max) :
240W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
4-DFN-EP (8x8)
Package / Case :
4-VSFN Exposed Pad
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