STP13N65M2 Pricing (USD) [47714pcs Stock]
- 1 pcs$0.81948
- 10 pcs$0.74171
- 100 pcs$0.59604
- 500 pcs$0.46359
- 1,000 pcs$0.38412
- Part Number:
- STP13N65M2
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 650V 10A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Diodes - Zener - Single, Diodes - Bridge Rectifiers and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in STMicroelectronics STP13N65M2 electronic components. STP13N65M2 can be shipped within 24 hours after order. If you have any demands for STP13N65M2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STP13N65M2 Product Attributes
Part Number :
STP13N65M2
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 10A TO220
Series :
MDmesh™ M2
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
430 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
590pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
110W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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