ON Semiconductor - FCB20N60FTM

KEY Part #: K6397437

FCB20N60FTM Pricing (USD) [26677pcs Stock]

  • 1 pcs$1.54487
  • 800 pcs$1.49067

Part Number:
FCB20N60FTM
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V 20A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Diodes - Rectifiers - Arrays and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in ON Semiconductor FCB20N60FTM electronic components. FCB20N60FTM can be shipped within 24 hours after order. If you have any demands for FCB20N60FTM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCB20N60FTM Product Attributes

Part Number : FCB20N60FTM
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V 20A D2PAK
Series : SuperFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 98nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 3080pF @ 25V
FET Feature : -
Power Dissipation (Max) : 208W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D²PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB