FCP110N65F Pricing (USD) [17545pcs Stock]
- 1 pcs$2.34893
- 800 pcs$1.67973
- Part Number:
- FCP110N65F
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 650V 35A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP110N65F electronic components. FCP110N65F can be shipped within 24 hours after order. If you have any demands for FCP110N65F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP110N65F Product Attributes
Part Number :
FCP110N65F
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 650V 35A TO220
Series :
FRFET®, SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs :
145nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4895pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
357W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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