SQD100N04-3M6_GE3 Pricing (USD) [119955pcs Stock]
- 1 pcs$0.30834
- Part Number:
- SQD100N04-3M6_GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 40V 100A TO252AA.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs, Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - IGBTs - Arrays and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SQD100N04-3M6_GE3 electronic components. SQD100N04-3M6_GE3 can be shipped within 24 hours after order. If you have any demands for SQD100N04-3M6_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD100N04-3M6_GE3 Product Attributes
Part Number :
SQD100N04-3M6_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 40V 100A TO252AA
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
6700pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
136W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252AA
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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