DMT68M8LSS-13 Pricing (USD) [376192pcs Stock]
- 1 pcs$0.09832
- Part Number:
- DMT68M8LSS-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET N-CHANNEL 60V 28.9A 8SO.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT68M8LSS-13 electronic components. DMT68M8LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT68M8LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT68M8LSS-13 Product Attributes
Part Number :
DMT68M8LSS-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET N-CHANNEL 60V 28.9A 8SO
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
28.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.5 mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31.8nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2107pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
1.9W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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