IPA65R099C6XKSA1 Pricing (USD) [2452pcs Stock]
- 1 pcs$3.11134
- 10 pcs$2.77729
- 100 pcs$2.27723
- Part Number:
- IPA65R099C6XKSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 650V 38A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPA65R099C6XKSA1 electronic components. IPA65R099C6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA65R099C6XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPA65R099C6XKSA1 Product Attributes
Part Number :
IPA65R099C6XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 650V 38A TO220
Series :
CoolMOS™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs :
127nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2780pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PG-TO220 Full Pack
Package / Case :
TO-220-3 Full Pack
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