EGF1BHE3_A/I Pricing (USD) [460696pcs Stock]
- 1 pcs$0.08029
- Part Number:
- EGF1BHE3_A/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 100V 1A DO214BA. Rectifiers 1A,100V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division EGF1BHE3_A/I electronic components. EGF1BHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGF1BHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGF1BHE3_A/I Product Attributes
Part Number :
EGF1BHE3_A/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 100V 1A DO214BA
Series :
Automotive, AEC-Q101, Superectifier®
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
100V
Current - Average Rectified (Io) :
1A
Voltage - Forward (Vf) (Max) @ If :
1V @ 1A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Current - Reverse Leakage @ Vr :
1µA @ 100V
Capacitance @ Vr, F :
15pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-214BA
Supplier Device Package :
DO-214BA (GF1)
Operating Temperature - Junction :
-65°C ~ 175°C
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