Vishay Semiconductor Diodes Division - ES2AHE3_A/H

KEY Part #: K6457301

ES2AHE3_A/H Pricing (USD) [445255pcs Stock]

  • 1 pcs$0.08307
  • 3,000 pcs$0.07596

Part Number:
ES2AHE3_A/H
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 50V 2A DO214AA. Rectifiers 2A,50V,20ns SMB, UF Rect, SMD
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - IGBTs - Modules, Power Driver Modules, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division ES2AHE3_A/H electronic components. ES2AHE3_A/H can be shipped within 24 hours after order. If you have any demands for ES2AHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES2AHE3_A/H Product Attributes

Part Number : ES2AHE3_A/H
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 50V 2A DO214AA
Series : Automotive, AEC-Q101
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 50V
Current - Average Rectified (Io) : 2A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 2A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 20ns
Current - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : 18pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AA, SMB
Supplier Device Package : DO-214AA (SMB)
Operating Temperature - Junction : -55°C ~ 150°C

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