IXFX200N10P Pricing (USD) [9721pcs Stock]
- 1 pcs$4.68680
- 30 pcs$4.66349
- Part Number:
- IXFX200N10P
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 100V 200A PLUS247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXFX200N10P electronic components. IXFX200N10P can be shipped within 24 hours after order. If you have any demands for IXFX200N10P, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX200N10P Product Attributes
Part Number :
IXFX200N10P
Manufacturer :
IXYS
Description :
MOSFET N-CH 100V 200A PLUS247
Series :
HiPerFET™, PolarP2™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
235nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
830W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
PLUS247™-3
Package / Case :
TO-247-3
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