IXYS - IXFX200N10P

KEY Part #: K6394682

IXFX200N10P Pricing (USD) [9721pcs Stock]

  • 1 pcs$4.68680
  • 30 pcs$4.66349

Part Number:
IXFX200N10P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 100V 200A PLUS247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - DIACs, SIDACs and Power Driver Modules ...
Competitive Advantage:
We specialize in IXYS IXFX200N10P electronic components. IXFX200N10P can be shipped within 24 hours after order. If you have any demands for IXFX200N10P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX200N10P Product Attributes

Part Number : IXFX200N10P
Manufacturer : IXYS
Description : MOSFET N-CH 100V 200A PLUS247
Series : HiPerFET™, PolarP2™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs : 235nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 830W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PLUS247™-3
Package / Case : TO-247-3