IRF1010ESTRLPBF Pricing (USD) [103465pcs Stock]
- 1 pcs$0.37791
- 800 pcs$0.34318
- Part Number:
- IRF1010ESTRLPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 60V 84A D2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF1010ESTRLPBF electronic components. IRF1010ESTRLPBF can be shipped within 24 hours after order. If you have any demands for IRF1010ESTRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1010ESTRLPBF Product Attributes
Part Number :
IRF1010ESTRLPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 60V 84A D2PAK
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
12 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3210pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
200W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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