IPL65R1K0C6SATMA1 Pricing (USD) [162824pcs Stock]
- 1 pcs$0.22716
- 5,000 pcs$0.20836
- Part Number:
- IPL65R1K0C6SATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 8TSON.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Diodes - Zener - Single, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPL65R1K0C6SATMA1 electronic components. IPL65R1K0C6SATMA1 can be shipped within 24 hours after order. If you have any demands for IPL65R1K0C6SATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPL65R1K0C6SATMA1 Product Attributes
Part Number :
IPL65R1K0C6SATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 8TSON
Series :
CoolMOS™ C6
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
328pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
34.7W (Tc)
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Thin-PAK (5x6)
Package / Case :
8-PowerTDFN
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