Infineon Technologies - IPN80R2K4P7ATMA1

KEY Part #: K6405413

IPN80R2K4P7ATMA1 Pricing (USD) [257208pcs Stock]

  • 1 pcs$0.14380

Part Number:
IPN80R2K4P7ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
COOLMOS P7 800V SOT-223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Infineon Technologies IPN80R2K4P7ATMA1 electronic components. IPN80R2K4P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R2K4P7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN80R2K4P7ATMA1 Product Attributes

Part Number : IPN80R2K4P7ATMA1
Manufacturer : Infineon Technologies
Description : COOLMOS P7 800V SOT-223
Series : CoolMOS™ P7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id : 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 500V
FET Feature : -
Power Dissipation (Max) : 6.3W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-SOT223
Package / Case : TO-261-3

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