PSMN4R3-80ES,127 Pricing (USD) [67219pcs Stock]
- 1 pcs$1.46312
- 10 pcs$1.32078
- 100 pcs$1.00674
- 500 pcs$0.78303
- 1,000 pcs$0.64880
- Part Number:
- PSMN4R3-80ES,127
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 80V 120A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs and Thyristors - SCRs - Modules ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN4R3-80ES,127 electronic components. PSMN4R3-80ES,127 can be shipped within 24 hours after order. If you have any demands for PSMN4R3-80ES,127, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN4R3-80ES,127 Product Attributes
Part Number :
PSMN4R3-80ES,127
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 80V 120A I2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.3 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
111nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8161pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
306W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
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