ON Semiconductor - BVSS84LT1G

KEY Part #: K6397343

BVSS84LT1G Pricing (USD) [827476pcs Stock]

  • 1 pcs$0.04470
  • 3,000 pcs$0.02924

Part Number:
BVSS84LT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 50V 130MA SOT-23-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single, Diodes - Zener - Single and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in ON Semiconductor BVSS84LT1G electronic components. BVSS84LT1G can be shipped within 24 hours after order. If you have any demands for BVSS84LT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BVSS84LT1G Product Attributes

Part Number : BVSS84LT1G
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 50V 130MA SOT-23-3
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 50V
Current - Continuous Drain (Id) @ 25°C : 130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 5V
Rds On (Max) @ Id, Vgs : 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 36pF @ 5V
FET Feature : -
Power Dissipation (Max) : 225mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23-3
Package / Case : TO-236-3, SC-59, SOT-23-3

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